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Improved performance in vertical GaN Schottky diode assisted by AlGaN  tunneling barrier: Applied Physics Letters: Vol 108, No 11
Improved performance in vertical GaN Schottky diode assisted by AlGaN tunneling barrier: Applied Physics Letters: Vol 108, No 11

Fabrication and characterization of vertical GaN Schottky barrier diodes  with boron-implanted termination
Fabrication and characterization of vertical GaN Schottky barrier diodes with boron-implanted termination

Electronics | Free Full-Text | Review of the Recent Progress on GaN-Based  Vertical Power Schottky Barrier Diodes (SBDs)
Electronics | Free Full-Text | Review of the Recent Progress on GaN-Based Vertical Power Schottky Barrier Diodes (SBDs)

GaN-Based Schottky Diode | IntechOpen
GaN-Based Schottky Diode | IntechOpen

Review of Recent Progress on Vertical GaN-Based PN Diodes | Discover Nano |  Full Text
Review of Recent Progress on Vertical GaN-Based PN Diodes | Discover Nano | Full Text

Switching performance of quasi‐vertical GaN‐based p‐i‐n diodes on Si -  Zhang - 2017 - physica status solidi (a) - Wiley Online Library
Switching performance of quasi‐vertical GaN‐based p‐i‐n diodes on Si - Zhang - 2017 - physica status solidi (a) - Wiley Online Library

Typical current-voltage characteristics of the Au/n-GaN diode at room... |  Download Scientific Diagram
Typical current-voltage characteristics of the Au/n-GaN diode at room... | Download Scientific Diagram

Increasing GaN Schottky diode breakdown voltage with recessed double-field  plate anode
Increasing GaN Schottky diode breakdown voltage with recessed double-field plate anode

High Breakdown Voltage with Low On-state Resistance of InGaN/GaN Vertical  Conducting Diodes
High Breakdown Voltage with Low On-state Resistance of InGaN/GaN Vertical Conducting Diodes

Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an  analogy with a MOS contact | Scientific Reports
Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact | Scientific Reports

Understanding of MoS2/GaN Heterojunction Diode and its Photodetection  Properties | Scientific Reports
Understanding of MoS2/GaN Heterojunction Diode and its Photodetection Properties | Scientific Reports

Gallium nitride vertical junction barrier Schottky diodes
Gallium nitride vertical junction barrier Schottky diodes

Figure 34. I-V characteristics of the Pt/GaOx/GaN-based Schottky diode  sensor device under different concentrations of H2 gas at (a) 300 (b) 373  and (c) 523 K (d) Schematic energy band diagrams of
Figure 34. I-V characteristics of the Pt/GaOx/GaN-based Schottky diode sensor device under different concentrations of H2 gas at (a) 300 (b) 373 and (c) 523 K (d) Schematic energy band diagrams of

Panasonic claims 7.6kA/cm² for a GaN diode
Panasonic claims 7.6kA/cm² for a GaN diode

GaN Power Converters | Ferdinand-Braun-Institut
GaN Power Converters | Ferdinand-Braun-Institut

A Seriously High-Power Gallium Nitride Diode | Engineering.com
A Seriously High-Power Gallium Nitride Diode | Engineering.com

Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN  p-n diodes with avalanche breakdown: Applied Physics Letters: Vol 107, No 24
Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown: Applied Physics Letters: Vol 107, No 24

PTC Website
PTC Website

High-Performance Schottky Diode Gas Sensor Based on the Heterojunction of  Three-Dimensional Nanohybrids of Reduced Graphene Oxide–Vertical ZnO  Nanorods on an AlGaN/GaN Layer | ACS Applied Materials & Interfaces
High-Performance Schottky Diode Gas Sensor Based on the Heterojunction of Three-Dimensional Nanohybrids of Reduced Graphene Oxide–Vertical ZnO Nanorods on an AlGaN/GaN Layer | ACS Applied Materials & Interfaces

Thin-film GaN Schottky diodes formed by epitaxial lift-off: Applied Physics  Letters: Vol 110, No 17
Thin-film GaN Schottky diodes formed by epitaxial lift-off: Applied Physics Letters: Vol 110, No 17

The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure  of high electron mobility transistors | Scientific Reports
The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors | Scientific Reports

a) Schematic view of GaN p-n diodes grown on bulk GaN substrate with... |  Download Scientific Diagram
a) Schematic view of GaN p-n diodes grown on bulk GaN substrate with... | Download Scientific Diagram

Embedding diodes in normally-off GaN transistors
Embedding diodes in normally-off GaN transistors

Electronics | Free Full-Text | Device Design Assessment of GaN Merged P-i-N  Schottky Diodes
Electronics | Free Full-Text | Device Design Assessment of GaN Merged P-i-N Schottky Diodes

Review of Recent Progress on Vertical GaN-Based PN Diodes | Discover Nano |  Full Text
Review of Recent Progress on Vertical GaN-Based PN Diodes | Discover Nano | Full Text