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Toyoda Gosei Achieves State-of-the-Art High Current Operation with Vertical GaN Power Semiconductor | Business Wire
![Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics | Scientific Reports Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics | Scientific Reports](https://media.springernature.com/m685/springer-static/image/art%3A10.1038%2Fs41598-019-46186-9/MediaObjects/41598_2019_46186_Fig1_HTML.png)
Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics | Scientific Reports
![Crystals | Free Full-Text | Current Understanding of Bias-Temperature Instabilities in GaN MIS Transistors for Power Switching Applications Crystals | Free Full-Text | Current Understanding of Bias-Temperature Instabilities in GaN MIS Transistors for Power Switching Applications](https://pub.mdpi-res.com/crystals/crystals-10-01153/article_deploy/html/images/crystals-10-01153-g001.png?1608694694)
Crystals | Free Full-Text | Current Understanding of Bias-Temperature Instabilities in GaN MIS Transistors for Power Switching Applications
a) Most favorable Gallium Nitride (GaN) Metal-Insulator-Semiconductor... | Download Scientific Diagram
![The equivalent circuit of GaN transistor with a driver during turning off. | Download Scientific Diagram The equivalent circuit of GaN transistor with a driver during turning off. | Download Scientific Diagram](https://www.researchgate.net/publication/321261000/figure/fig5/AS:667845994237969@1536238301747/The-equivalent-circuit-of-GaN-transistor-with-a-driver-during-turning-off.png)