Light Emitting Diodes (LEDs) for General Illumination
PDF) Investigation of periodic Mg doping in (0001) (Ga,In)N/GaN superlattices grown on by plasma-assisted molecular beam epitaxy (PAMBE) for hole injection in light emitting diodes
AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Thermally Oxidized AlxGa2–xO3 Sidewalls | ACS Omega
Applied Sciences | Free Full-Text | Observation of Highly Durable Silicone Resin for Encapsulating AlGaN-Based UVB Light-Emitting Diodes | HTML
Novel Strategy for Photopatterning Emissive Polymer Brushes for Organic Light Emitting Diode Applications | ACS Central Science
Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes | Light: Science & Applications
Light Emitting Diodes (LEDs) for General Illumination
Realization of Ultrahigh Quality InGaN Platelets to be Used as Relaxed Templates for Red Micro-LEDs | ACS Applied Materials & Interfaces
Applied Sciences | Free Full-Text | High-Performance White Organic Light-Emitting Diodes Using Distributed Bragg Reflector by Atomic Layer Deposition | HTML
AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Thermally Oxidized AlxGa2–xO3 Sidewalls | ACS Omega
PDF) Electronic and Optical Properties of Eu 2+ -Activated Narrow-Band Phosphors for Phosphor-Converted Light-Emitting Diode Applications: Insights from a Theoretical Spectroscopy Perspective
PDF) Emission pattern control and polarized light emission through patterned graded-refractive-index coatings on GaInN light-emitting diodes
Effects of the refractive index of the encapsulant on the light-extraction efficiency of light-emitting diodes
Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes | Light: Science & Applications
Optically functional surface composed of patterned graded-refractive-index coatings to enhance light-extraction of GaInN light-e
Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes | Light: Science & Applications
Applied Sciences | Free Full-Text | Investigation of the Electroluminescence Mechanism of GaN-Based Blue and Green Light-Emitting Diodes with Junction Temperature Range of 120–373 K | HTML
Applied Sciences | Free Full-Text | Investigation of the Electroluminescence Mechanism of GaN-Based Blue and Green Light-Emitting Diodes with Junction Temperature Range of 120–373 K | HTML
Applied Sciences | Free Full-Text | Enhanced Radiative Recombination Rate by Local Potential Fluctuation in InGaN/AlGaN Near-Ultraviolet Light-Emitting Diodes | HTML
Download PDF | High Brightness GaN-Based Light-Emitting Diodes
