Electronics | Free Full-Text | Device Design Assessment of GaN Merged P-i-N Schottky Diodes | HTML
Parameter extraction method for a physics‐based lumped‐charge SiC MPS diode model - Li - 2020 - IET Power Electronics - Wiley Online Library
1.2-kV 4H-SiC Merged PiN Schottky Diode With Improved Surge Current Capability
Ruggedness of 1200 V SiC MPS diodes - ScienceDirect
SiC Schottky Diode Device Design: Characterizing Performance & Reliability
Basic unit cell of a MPS diode | Download Scientific Diagram
Electrical and photoresponse properties of CoSO4-PVP interlayer based MPS diodes | SpringerLink
Advantages of the 1200 V SiC Schottky Diode with MPS Design - Technical Articles
The Wolfspeed MPS Diode Advantage - YouTube
Advantages of the 1200 V SiC Schottky Diodes with MPS Design | Mouser
MPS (Merged p-i-n/Schottky) Diode
Reverse Characteristic Model of SiC MPS Diode | SpringerLink
A New 1200V SiC MPS Diode with Improved Performance and Ruggedness | Scientific.Net
Junction barrier Schottky diode (JBS) and merged PiN Schottky diode... | Download Scientific Diagram
The Wolfspeed MPS Diode Advantage - YouTube
Control of pn-junction turn-on voltage in 4H-SiC merged PiN Schottky diode
Avalanche Ruggedness of SiC MPS Diodes Under Repetitive Unclamped-Inductive-Switching Stress - Technical Articles
SiC Schottky Diode Device Design: Characterizing Performance & Reliability
Electronics | Free Full-Text | Device Design Assessment of GaN Merged P-i-N Schottky Diodes | HTML
Design and Optimization of Silicon Carbide Schottky Diodes - Power Electronics News
1200-V 4H-SiC Merged p-i-n Schottky Diodes With High Avalanche Capability
Advantages of the 1200 V SiC Schottky Diode with MPS Design
4.4.3.2 MPS Diode Simulation
Energies | Free Full-Text | Promise and Challenges of High-Voltage SiC Bipolar Power Devices | HTML
